all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 03.1, 2016-06-10 ptfb092707fh ptfb092707fh package h-37288l-4/2 thermally-enhanced high power rf ldmos fet 270 w, 28 v, 925 C 960 mhz features ? broadband internal input and output matching ? typical pulsed cw performance (10 s pulse width10%, duty cycle, class ab), 960 mhz, 28 v - output power at p 1db = 250 w - effciency = 52% - gain = 18.5 db ? typical single-carrier wcdma performance, 960 mhz, 28 v, 7.5 db par @ 0.01% ccdf, - output power = 63 w - effciency = 33% - gain = 19.5 db - acpr = C35 dbc @ 3.84 mhz ? capable of handling 10:1 vswr @28 v, 220 w (cw) output power ? integrated esd protection ? low thermal resistance ? pb-free and rohs compliant description the ptfb092707fh is a 270-watt ldmos fet intended for use in multi-standard cellular power amplifer applications in the 925 to 960 mhz frequency band. features include input and output match - ing, high gain and thermally-enhanced package with earless fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. rf characteristics two-carrier wcdma specifcations (tested in infneon test fxture) v dd = 28 v, i dq = 2150 ma, p out = 60 w avg, ? = 960 mhz, 3gpp signal, 3.84 mhz channel bandwidth, 8 db peak/average @ 0.01% ccdf, 10 mhz spacing characteristic symbol min typ max unit gain g ps 18 19 db drain effciency h d 28 29 % intermodulation distortion imd C34 C33 dbc 0 10 20 30 40 50 16 17 18 19 20 21 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2150 ma, ? = 925 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficienc y b092707fh-gr1a
ptfb092707fh data sheet 2 of 10 rev. 03.1, 2016-06-10 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 28 v, i dq = 2150 ma v gs 2.5 3.9 4.5 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v junction temperature t j 200 c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70c, 220 w cw) r qjc 0.214 c/w ordering information type and version order code package and description shipping ptfb092707fh v1 r0 PTFB092707FHV1R0xtma1 h-37288l-4/2, earless fange tape & reel, 50 pcs ptfb092707fh v1 r250 ptfb092707fhv1r250xtma1 h-37288l-4/2, earless fange tape & reel, 250 pcs
data sheet 3 of 10 rev. 03.1, 2016-06-10 ptfb092707fh 0 10 20 30 40 50 16 17 18 19 20 21 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2150 ma, ? = 940 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficiency b092707fh-gr1b 0 10 20 30 40 50 16 17 18 19 20 21 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2150 ma, ? = 960 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficiency b092707fh-gr1c 0 10 20 30 40 50 -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2150 ma, ? = 925 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency b092707fh-gr2a 0 10 20 30 40 50 -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2150 ma, ? = 940 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency b092707fh-gr2b typical performance (data taken in an infineon test fixture)
ptfb092707fh data sheet 4 of 10 rev. 03.1, 2016-06-10 0 10 20 30 40 50 60 15 16 17 18 19 20 21 29 33 37 41 45 49 53 57 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 2150 ma, ? = 925 mhz gain efficiency b092707fh-gr5a v dd = 24 v v dd = 28 v v dd = 32 v 0 10 20 30 40 50 -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2150 ma, ? = 960 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency b092707fh-gr2c 0 10 20 30 40 50 60 15 16 17 18 19 20 21 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 2150 ma gain efficiency b092707fh-gr4 925 mhz 940 mhz 960 mhz typical performance (cont.) -55 -45 -35 -25 -15 29 33 37 41 45 49 53 imd (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2150 ma 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw b092707fh-gr3 imd up imd low 925 mhz 940 mhz 960 mhz
data sheet 5 of 10 rev. 03.1, 2016-06-10 ptfb092707fh 0 10 20 30 40 50 60 15 16 17 18 19 20 21 29 33 37 41 45 49 53 57 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 2150 ma, ? = 940 mhz gain efficiency b092707fh-gr5b v dd = 24 v v dd = 28 v v dd = 32 v 0 10 20 30 40 50 60 15 16 17 18 19 20 21 29 33 37 41 45 49 53 57 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 2150 ma, ? = 960 mhz gain efficiency b092707fh-gr5c v dd = 24 v v dd = 28 v v dd = 32 v -25 -20 -15 -10 -5 17 18 19 20 21 850 900 950 1000 1050 1100 input return loss (db) power gain (db) frequency (mhz) small signal cw performance v dd = 28 v, i dq = 2150 ma gain irl b092707fh-gr6 typical performance (cont.)
ptfb092707fh data sheet 6 of 10 rev. 03.1, 2016-06-10 load pull performance z source z load g s d broadband circuit impedance frequency z source w z load w mhz r jx r jx 900 1.52 C1.80 0.98 C1.65 920 1.55 C1.69 0.89 C1.54 940 1.59 C1.60 0.82 C1.42 960 1.63 C1.53 0.74 C1.29 980 1.65 C1.48 0.67 C1.16 pulsed cw signal: 10 sec, 10% duty cycle, 28 v, 2.0 a p 1db class ab max output power max pae freq [mhz] zs [ w] zl [ w] gain [db] p out [dbm] p out [w] pae [%] zl [ w] gain [db] p out [dbm] p out [w] pae [%] 920 1.62 C j2.25 0.88 C j1.37 17.3 54.26 267 42.9 2.16 C j0.22 20.8 52.02 159 62.1 940 1.80 C j2.54 0.76 C j1.49 17.0 54.38 274 41.4 2.38 C j0.50 20.9 51.87 154 61.8 960 1.73 C j2.59 0.73 C j1.46 17.4 54.38 274 41.4 2.09 C j0.64 20.8 52.02 159 60.3 reference circuit, tuned for 925 C 960 mhz dut ptfb092707fh v1 reference circuit part no. ltn/ptfb092707fh v1 pcb rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 find gerber fles for this reference fxture on the infneon web site ( www.infneon.com/rfpower )
data sheet 7 of 10 rev. 03.1, 2016-06-10 ptfb092707fh reference circuit (cont.) reference circuit assembly diagram (not to scale) assembly information component description suggested manufacturer p/n input c101 chip capacitor, 1 pf atc atc100b1r0cw500xb c102 chip capacitor, 0.002 f atc atc200b203mw50x c103 chip capacitor, 4.7 pf atc atc100b4r7cw500xb c104 chip capacitor, 33 pf atc atc100b330jw c105 capacitor 4.7 f nichicon f931c475maa c106, c108 chip capacitor, 56 pf atc atc100b560jt c107 chip capacitor, 12 pf atc atc100b120jw c109 chip capacitor, 4.7 pf atc atc100b4r7ct c110 chip capacitor, 0.01 f atc atc200b103mw50x c801, c804 chip capacitor, 0.1 f panasonic electronic components ecj-3vb1h104k c802, c803, c805 chip capacitor, 0.001 f panasonic ecj-1vb1h102k r101, r801, r803 resistor, 10 w panasonic electronic components erj-8geyj100v r102, r103 resistor, 20 w panasonic electronic components erj-8geyj200v r802 resistor, 1k w panasonic electronic components erj-8geyj102v r804 1.3k ohms panasonic electronic components erj-3geyj132v r805 1.2k ohms panasonic electronic components erj-3geyj122v (table cont. next page) b 0 9 2 7 0 7 f h _ c d _ 2 0 1 4 - 0 3 - 2 7 ptfb092707fh/1_out_01 (62) ro4350, .020 c214 c217 c206 c216 c201 c209 c207 c211 c203 c204 c212 c213 c202 c210 c218 c208 c215 (62) ro4350, .020 ptfb092707fh/1_in_01 r801 c801 r803 c804 r802 c803 s1 r804 r805 c802 c805 c101 c106 c110 c103 r101 c107 c108 c109 c104 c105 r102 c102 r103 s3 s2 rf_out rf_in v dd v dd ptfb092707fh c205
ptfb092707fh data sheet 8 of 10 rev. 03.1, 2016-06-10 reference circuit (cont.) lead connections for ptfb092707fh pinout diagram (top view) assembly information (cont.) component description suggested manufacturer p/n s1 transistor fairchild semiconductor bcp56-10 s2 potentiometer, 2k w bourns inc. 3224w-1-202e s3 voltage regulator fairchild semiconductor lm7805 output c201, c212 chip capacitor, 10 f matsuo 281m5002106k c202 chip capacitor, 2.2 pf atc atc100b2r2cw c203, c213 ceramic capacitor, 1 f, 250 v avx corporation 2225pc105kat1a c204, c205, c214, c215 capacitor, 10 f taiyo yuden umk325c7106mm-t c206 chip capacitor, 4.2 pf atc atc100b4r2ct c207 chip capacitor, 56 pf atc atc100b560jt c208 chip capacitor, 3.3 pf atc atc100b3r3cw c209, c216, c217, c218 ceramic capacitor, 4.7 f, 50 v murata electronics north america grm32er71h475ka88l c210, c211 capacitor, 10k pf atc atc200b103mw50x g d s v v h - 3 7 2 8 8 l - 4 / 2 _ p d _ 3 - 2 7 - 2 0 1 4 pin description d drain g gate s (fange) source v supply voltage, v dd
data sheet 9 of 10 rev. 03.1, 2016-06-10 ptfb092707fh package outline specifications package h-37288l-4/2 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source; v1, v2 C v dd . 5. lead thickness: 0.13 + 0.051/C0.025 mm [0.005+0.002/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. 2 x 1.02 [. 040 ] 4. 03 [. 158 ] 2x 17 . 75 [. 699 ] c l c l c l 45 x 1. 96 [. 077 ] g d v v 1. 02 [. 040 ] 23 . 11 [. 910 ] s 22. 350 . 20 [. 880 . 008 ] 9. 78 [. 385 ] 4 x 4.830.51 [. 190 . 020 ] c l 4. 04 +0. 25 - 0. 13 [ . 159 +. 010 - . 005 ] ( 19. 43 [. 765 ]) l c 2x 5 . 46 [. 215 ] 2x 2. 16 [. 085 ] 22. 86 [. 900 ] 25. 81 [1. 016 ] 2 x 4. 06 [. 160 ] 9. 40 [. 370 ] 1. 57 [. 062 ] sph h - 37288 l - 4 / 2 _po _01 _08 - 08 - 2013 d 4x r0. 51 + 0. 38 - 0 . 13 [ r . 020 +. 015 - . 005 ] diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source; v C v dd . 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005]. 4. pins: d C drain, g C gate, s (fange) C source, v C v dd . 5. lead thickness: 0.10 +0.051/C0.025 [.004 +.002/C.001]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. find the latest and most complete information tabout products and packaging at the infneon internet page ( www.infneon.com/rfpower)
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